Physical Review B 70, 195336 (2004)
| Low-temperature mobility of holes in Si/SiGe p-channel heterostructures | |
| Low-temperature mobility of holes in Si/SiGe p-channel heterostructures | |
| Tạp chí Physical Review B 2004 23 November 2004; 70 (19):195336 | |
| Tác giả | Doan Nhat Quanga, Vu Ngoc Tuocb, Tran Doan Huanc and Pham Nam Phongb |
| Nơi thực hiện |
a
Department
of
Physics,
Graduate
School
of
Science,
Osaka
University,
1-1
Machikaneyama,
Toyonaka,
Osaka
560-0043,
Japan
and
Center
for
Theoretical
Physics,
National
Center
for
Science
and
Technology,
P.O.
Box
429,
Boho,
Hanoi
10000,
Vietnam
bInstitute of Engineering Physics, Hanoi University of Technology, 1 Dai Co Viet Road, Hanoi, Vietnam cInstitute of Engineering Physics, Hanoi University of Technology, 1 Dai Co Viet Road, Hanoi, Vietnam and Department of Physics, Florida state University, Tallahassee, FL 32306, USA |
| Từ khóa | mobility, heterostructures |
| DOI URL PDF | |
Abstract[sửa]
We present a theory of the low-temperature mobility of holes in strained SiGe layers of Si/SiGe p-channel heterostructures. Our theory must not be based on the unclear concept of interface impurity charges assumed in the previous calculations, but takes adequate account of the random deformation potential and random piezoelectric field. These appear as effects arising from both lattice mismatch and interface roughness. It is proved that deformation potential scattering may be predominant over the well-known scattering mechanisms such as background doping, alloy disorder, and surface roughness for a Ge content x0.2, while piezoelectric scattering is comparable thereto for x0.4. Our theory turns out to be successful in providing a good quantitative explanation of recent experimental findings not only about the low value of the hole mobility but also its dependence on carrier density as well as its decrease with Ge content.
