Physical Review Letters 89, 077601 (2002)

Từ VLOS
Bước tới: chuyển hướng, tìm kiếm
Random Piezoelectric Field in Real [001]-Oriented Strain-Relaxed Semiconductor Heterostructures
Random Piezoelectric Field in Real [001]-Oriented Strain-Relaxed Semiconductor Heterostructures
 Tạp chí Physical Review Letters 2002 29 July 2002; 89 (7):077601
 Tác giả   Doan Nhat Quanga, Vu Ngoc Tuocb, Nguyen Huyen Tungb and Tran Doan Huanb
 Nơi thực hiện   a Center for Theoretical Physics, National Center for Science and Technology, P.O. Box 429, Boho, Hanoi 10000, Vietnam

bInstitute of Engineering Physics, Hanoi University of Technology, 1 Dai Co Viet Road, Hanoi, Vietnam

 Từ khóa   Piezoelectric, Strain-Relaxation, Semiconductor Heterostructures
  DOI   URL  PDF

Abstract[sửa]

We work out a theory of piezoelectricity in an actual semiconductor heterostructure which is composed of a lattice-mismatched zinc-blende layer grown on a [001]-oriented substrate. In contrast to earlier theories, we predict a large density of fixed bulk piezoelectric charges, which are induced by strain fluctuations connected with interface roughness. The piezoelectric charges create a high electric field. The random piezoelectric field presents a conceptually new important scattering mechanism. The system of charge carriers in such a heterostructure becomes strongly disordered and includes generally both free electron-hole pairs near the interface and excitons far from it.

Liên kết đến đây