Physical Review B 62, 15337 (2000)

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Effects of surface roughness and alloy disorder on the density of states in semiconductor quantum wires
Effects of surface roughness and alloy disorder on the density of states in semiconductor quantum wires
 Tạp chí Physical Review B 2000 15 December 2000; 62 (23):15337
 Tác giả   Doan Nhat Quanga and Nguyen Huyen Tungb
 Nơi thực hiện   a Center for Theoretical Physics, National Center for Natural Science and Technology, P.O. Box 429 Boho, Hanoi 10000, Vietnam

bInstitute of Engineering Physics, Hanoi University of Technology, 1 Dai Co Viet Road, Hanoi, Vietnam
 Từ khóa   quantum wire, density of state, surface roughness, alloy disorder
  DOI   URL  PDF

Abstract[sửa]

We calculate the effects of surface roughness and alloy disorder on the density of states (DOS) in cylindrical semiconductor quantum wires with inclusion of a Hubbard local-field correction. It is found that the disorder-induced DOS tail becomes much larger and much more extended below the subband edge when reducing the wire size. Further, the DOS tail at low energies may be enhanced by the Hubbard correction by up to several orders of magnitude. A possibility of applying our results to describe the observed inhomogeneous broadening of exciton lines in the absorption and emission spectra of quantum wires is discussed.

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