Physical Review Letters 89, 077601 (2002)
| Random Piezoelectric Field in Real [001]-Oriented Strain-Relaxed Semiconductor Heterostructures | |
| Random Piezoelectric Field in Real [001]-Oriented Strain-Relaxed Semiconductor Heterostructures | |
| Tạp chí Physical Review Letters 2002 29 July 2002; 89 (7):077601 | |
| Tác giả | Doan Nhat Quanga, Vu Ngoc Tuocb, Nguyen Huyen Tungb and Tran Doan Huanb |
| Nơi thực hiện |
a
Center
for
Theoretical
Physics,
National
Center
for
Science
and
Technology,
P.O.
Box
429,
Boho,
Hanoi
10000,
Vietnam
bInstitute of Engineering Physics, Hanoi University of Technology, 1 Dai Co Viet Road, Hanoi, Vietnam |
| Từ khóa | Piezoelectric, Strain-Relaxation, Semiconductor Heterostructures |
| DOI URL PDF | |
Abstract[sửa]
We work out a theory of piezoelectricity in an actual semiconductor heterostructure which is composed of a lattice-mismatched zinc-blende layer grown on a [001]-oriented substrate. In contrast to earlier theories, we predict a large density of fixed bulk piezoelectric charges, which are induced by strain fluctuations connected with interface roughness. The piezoelectric charges create a high electric field. The random piezoelectric field presents a conceptually new important scattering mechanism. The system of charge carriers in such a heterostructure becomes strongly disordered and includes generally both free electron-hole pairs near the interface and excitons far from it.
