Physica status solidi (b) 244, 2100 (2007)
| Diffusion thermopower of a p-type Si/Si1-x Gex heterostructure at zero magnetic field | |
| Diffusion thermopower of a p-type Si/Si1-x Gex heterostructure at zero magnetic field | |
| Tạp chí physica status solidi (b) 2007 3 January, 2007; 244 (6):2100 | |
| Tác giả | Tran Doan Huana and Nguyen Phuc Haia, b |
| Nơi thực hiện |
aInstitute
of
Engineering
Physics,
Hanoi
University
of
Technology,
1
Dai
Co
Viet
Road,
Hanoi,
Vietnam
bFaculty of Engineering, Katholieke University of Leuven, Kasteelpark Arenberg 44, 3001 Heverlee (Leuven), Belgium |
| Từ khóa | diffusion thermopower, heterostructures, scattering |
| DOI URL PDF | |
Abstract[sửa]
We calculate the diffusion thermopower of the degenerate two-dimensional hole gas in a p-type Si/Si1-x Gex lattice mismatched heterostructure at low temperatures and zero magnetic field. The effects of possible scatterings, e.g. remote impurity, alloy disorder, interface roughness, deformation potential, and random piezoelectric on the hole mobility and the diffusion thermopower are examined. Calculated results are well fitted to the experimental data recently reported. In addition, we predict a possibility for the diffusion thermopower to change its sign as the SiGe layer thickness changes, the effect has not been discussed yet. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
