Physical Review B 64, 125324 (2001)
| Effect of impurity correlation in modulation-doped quantum wires | |
| Effect of impurity correlation in modulation-doped quantum wires | |
| Tạp chí Physical Review B 2001 11 November 2001; 64 (12):125324 | |
| Tác giả | Doan Nhat Quanga, Nguyen Huyen Tung b and Tran Doan Huanb |
| Nơi thực hiện |
a
Center
for
Theoretical
Physics,
National
Center
for
Science
and
Technology,
P.O.
Box
429,
Boho,
Hanoi
10000,
Vietnam
bInstitute of Engineering Physics, Hanoi University of Technology, 1 Dai Co Viet Road, Hanoi, Vietnam |
| Từ khóa | impurity correlation, quantum wire, electron mobility |
| DOI URL PDF | |
Abstract[sửa]
A
theory
is
given
of
the
electronic
properties
of
modulation-doped
quantum
wires
which
undergo
a
thermal
treatment,
taking
into
account
the
Coulomb
interaction
among
ionized
impurities
in
the
sample
preparation.
It
is
pointed
out
that
the
correlation
among
impurities
weakens
their
field
and
is
enhanced
when
elevating
the
doping
level,
lowering
the
freezing
temperature
for
impurity
diffusion,
and
reducing
the
size
of
the
impurity
system.
The
screening
of
the
ionic
correlation
by
charge
carriers
in
the
sample
growth
is
of
minor
importance.
In
the
limiting
case
of
a
one-dimensional
impurity
system,
the
correlation
may
totally
suppress
the
random
field
at
any
doping
level,
so
that
a
finite
electron
mobility
is
governed
by
other
scattering
mechanisms
than
impurity
doping,
e.g.,
interface
roughness
and
alloying.
It
is
found
that
the
ionic
correlation
changes
the
electron
mobility
of
quantum
wires
as
regards
not
only
its
magnitude
but
its
dependence
on
the
doping
conditions
as
well.
For
impurity
systems
of
a
small
size,
the
mobility
may
be
increased
by
up
to
more
than
one
order
of
magnitude
at
a
doping
level
of
.
