Physical Review B 68, 153306 (2003)
| Strain fluctuations in a real [001]-oriented zinc-blende-structure surface quantum well | |
| Strain fluctuations in a real [001]-oriented zinc-blende-structure surface quantum well | |
| Tạp chí Physical Review B 2003 10 October 2003; 68 (15):153306 | |
| Tác giả | Doan Nhat Quanga, Vu Ngoc Tuocb, Nguyen Huyen Tungb and Tran Doan Huanb |
| Nơi thực hiện |
a
Center
for
Theoretical
Physics,
National
Center
for
Science
and
Technology,
P.O.
Box
429,
Boho,
Hanoi
10000,
Vietnam
bInstitute of Engineering Physics, Hanoi University of Technology, 1 Dai Co Viet Road, Hanoi, Vietnam |
| Từ khóa | piezoelectric, strain relaxation, surface quantum well |
| DOI URL PDF | |
Abstract[sửa]
A theoretical study is presented of effects from strain fluctuations in a surface quantum well (SQW), which is composed of a strained zinc-blende-structure layer grown on a (001) substrate. It is found that in analogy to a zinc-blende quantum well (QW) with buried interfaces there always exist in the SQW a large fluctuating density of bulk piezoelectric charges and a high random piezoelectric field. However, in contrast to the buried QW case, roughness at a free surface of the SQW causes random fluctuations in the dilatation, which give rise to perturbing deformation potentials. The piezoelectric field and deformation potentials supply strong disorder interactions as new important scattering mechanisms for confined charge carriers in SQW's. A comparison of their effects in a SQW and the QW under equal conditions is given.
