Physical Review B 68, 153306 (2003)

Bước tới: chuyển hướng, tìm kiếm
Strain fluctuations in a real [001]-oriented zinc-blende-structure surface quantum well
Strain fluctuations in a real [001]-oriented zinc-blende-structure surface quantum well
 Tạp chí Physical Review B 2003 10 October 2003; 68 (15):153306
 Tác giả   Doan Nhat Quanga, Vu Ngoc Tuocb, Nguyen Huyen Tungb and Tran Doan Huanb
 Nơi thực hiện   a Center for Theoretical Physics, National Center for Science and Technology, P.O. Box 429, Boho, Hanoi 10000, Vietnam

bInstitute of Engineering Physics, Hanoi University of Technology, 1 Dai Co Viet Road, Hanoi, Vietnam

 Từ khóa   piezoelectric, strain relaxation, surface quantum well


A theoretical study is presented of effects from strain fluctuations in a surface quantum well (SQW), which is composed of a strained zinc-blende-structure layer grown on a (001) substrate. It is found that in analogy to a zinc-blende quantum well (QW) with buried interfaces there always exist in the SQW a large fluctuating density of bulk piezoelectric charges and a high random piezoelectric field. However, in contrast to the buried QW case, roughness at a free surface of the SQW causes random fluctuations in the dilatation, which give rise to perturbing deformation potentials. The piezoelectric field and deformation potentials supply strong disorder interactions as new important scattering mechanisms for confined charge carriers in SQW's. A comparison of their effects in a SQW and the QW under equal conditions is given.

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