Physical Review B 68, 195316 (2003)

Bước tới: chuyển hướng, tìm kiếm
Roughness-induced piezoelectric scattering in lattice-mismatched semiconductor quantum wells
Roughness-induced piezoelectric scattering in lattice-mismatched semiconductor quantum wells
 Tạp chí Physical Review B 2003 21 November 2003; 68 (19):195316
 Tác giả   Doan Nhat Quanga, Vu Ngoc Tuocb and Tran Doan Huanc
 Nơi thực hiện   a Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043, Japan

bFB 6-Theoretische Physik, Universität Paderborn, Warburger 100, 33098 Paderborn, Germany

cInstitute of Engineering Physics, Hanoi University of Technology, 1 Dai Co Viet Road, Hanoi, Vietnam

 Từ khóa   piezoelectric, strain relaxation, quantum well


We present a theory of the mobility of electrons in real semiconductor quantum wells (QW's) made from lattice-mismatched epitaxial layers. In the case of zinc-blende structure QW's, we prove that besides the conventional scattering mechanisms, e.g., impurity doping, surface roughness, and alloy disorder there exists an ad hoc scattering source, which is due to a large fluctuating density of roughness-induced piezoelectric charges. Scattering by their piezoelectric field is found to be a new important scattering mechanism limiting the electron mobility of real strained QW's, especially those with a well thickness of the order of or greater than 50 Å. By incorporating this scattering into the theory, we are able to provide a perfect explanation for the low-temperature electron mobility measured in lattice-mismatched InGaAs-based QW's, which has not been understood starting from the so far-known scattering sources. The possibility of applying our theory to other lattice-mismatched systems such as Si/SiGe heterostructures and nitride-based QW's is outlined.

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