Physical Review B 68, 195316 (2003)
| Roughness-induced piezoelectric scattering in lattice-mismatched semiconductor quantum wells | |
| Roughness-induced piezoelectric scattering in lattice-mismatched semiconductor quantum wells | |
| Tạp chí Physical Review B 2003 21 November 2003; 68 (19):195316 | |
| Tác giả | Doan Nhat Quanga, Vu Ngoc Tuocb and Tran Doan Huanc |
| Nơi thực hiện |
a
Department
of
Physics,
Graduate
School
of
Science,
Osaka
University,
1-1
Machikaneyama,
Toyonaka,
Osaka
560-0043,
Japan
bFB 6-Theoretische Physik, Universität Paderborn, Warburger 100, 33098 Paderborn, Germany cInstitute of Engineering Physics, Hanoi University of Technology, 1 Dai Co Viet Road, Hanoi, Vietnam |
| Từ khóa | piezoelectric, strain relaxation, quantum well |
| DOI URL PDF | |
Abstract[sửa]
We present a theory of the mobility of electrons in real semiconductor quantum wells (QW's) made from lattice-mismatched epitaxial layers. In the case of zinc-blende structure QW's, we prove that besides the conventional scattering mechanisms, e.g., impurity doping, surface roughness, and alloy disorder there exists an ad hoc scattering source, which is due to a large fluctuating density of roughness-induced piezoelectric charges. Scattering by their piezoelectric field is found to be a new important scattering mechanism limiting the electron mobility of real strained QW's, especially those with a well thickness of the order of or greater than 50 Å. By incorporating this scattering into the theory, we are able to provide a perfect explanation for the low-temperature electron mobility measured in lattice-mismatched InGaAs-based QW's, which has not been understood starting from the so far-known scattering sources. The possibility of applying our theory to other lattice-mismatched systems such as Si/SiGe heterostructures and nitride-based QW's is outlined.
