Physical Review B 70, 195336 (2004)

Từ Thư viện Khoa học VLOS
Bước tới: chuyển hướng, tìm kiếm
Low-temperature mobility of holes in Si/SiGe p-channel heterostructures
Low-temperature mobility of holes in Si/SiGe p-channel heterostructures
 Tạp chí Physical Review B 2004 23 November 2004; 70 (19):195336
 Tác giả   Doan Nhat Quanga, Vu Ngoc Tuocb, Tran Doan Huanc and Pham Nam Phongb
 Nơi thực hiện   a Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043, Japan and Center for Theoretical Physics, National Center for Science and Technology, P.O. Box 429, Boho, Hanoi 10000, Vietnam

bInstitute of Engineering Physics, Hanoi University of Technology, 1 Dai Co Viet Road, Hanoi, Vietnam

cInstitute of Engineering Physics, Hanoi University of Technology, 1 Dai Co Viet Road, Hanoi, Vietnam and Department of Physics, Florida state University, Tallahassee, FL 32306, USA

 Từ khóa   mobility, heterostructures
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Abstract

We present a theory of the low-temperature mobility of holes in strained SiGe layers of Si/SiGe p-channel heterostructures. Our theory must not be based on the unclear concept of interface impurity charges assumed in the previous calculations, but takes adequate account of the random deformation potential and random piezoelectric field. These appear as effects arising from both lattice mismatch and interface roughness. It is proved that deformation potential scattering may be predominant over the well-known scattering mechanisms such as background doping, alloy disorder, and surface roughness for a Ge content x0.2, while piezoelectric scattering is comparable thereto for x0.4. Our theory turns out to be successful in providing a good quantitative explanation of recent experimental findings not only about the low value of the hole mobility but also its dependence on carrier density as well as its decrease with Ge content.

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